Semiconductor structures, low-dimensional systems, quantum phenomena

Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

M. M. Mezdrogina^a, Yu. V. Kozhanova<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu$^{3+}$ and Sm$^{3+}$. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level ($>$ 10$^{23}$ photons cm$^2$ s$^{-1}$) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

Received: 04.06.2012
Accepted: 15.06.2012

 English version: Semiconductors, 2013, 47:4, 501–510

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