This article is cited in 12 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical properties of semiconductor quantum dots

V. F. Kharlamov, D. A. Korostelev, I. G. Bogoraz, O. A. Milovidova, V. O. Sergeev

Educational-Research-Production Complex, State University, Orel, 302020, Russia

Abstract: A method, which makes it possible to obtain semiconductor particles $V\approx$ 10$^{-20}$ cm$^3$ in volume (quantum dots) with a concentration of up to 10$^{11}$ cm$^{-2}$ and electrical contacts to each of them, is suggested. High variability in the electrical properties of such particles from a metal oxide (CuO or NiO) after the chemisorption of gas molecules is found.

Received: 28.04.2012
Accepted: 04.06.2012

 English version: Semiconductors, 2013, 47:4, 494–500

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