This article is cited in 7 papers

Surface, interfaces, thin films

Relaxation-induced self-organization of a silicon crystal surface under microwave plasma micromachining

V. Ya. Shanygin, R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: The results of comprehensive studies of the effect of low-energy microwave plasma micromachining with various impact selectivities on the nanomorphology of the surface of single-crystal silicon with the (100) crystallographic orientation with a native oxide layer are presented. The main characteristic parameters and model mechanisms of the processes providing control of the nanomorphology of a silicon crystal’s surface during microwave plasma micromachining under conditions of weak adsorption are considered. The fundamental causes and factors underlying the processes of relaxation-induced self-organization of the nanomorphology of both the free silicon surface of a given crystallographic orientation and the surface protected by the native oxide coating under plasma micromachining are stated.

Received: 19.04.2012
Accepted: 10.05.2012

 English version: Semiconductors, 2013, 47:4, 469–480

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