This article is cited in 2 papers

Electronic properties of semiconductors

Experimental observation of giant Zeeman splitting of the light-hole level in a GaAs/AlGaAs quantum well

P. V. Petrov, Yu. L. Ivanov

Ioffe Institute, St. Petersburg

Abstract: The paramagnetic splitting of a light-hole level in a GaAs/AlGaAs quantum well is experimentally measured by the method of measuring the polarized photoluminescence in the magnetic field. The phenomenon of giant splitting, which was previously predicted theoretically and leads to an increase in the $g$ factor of a light hole to 9.4, is found.

Received: 25.09.2012
Accepted: 17.10.2012

 English version: Semiconductors, 2013, 47:4, 455–456

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