M. V. Shaleev, A. V. Novikov, D. V. Yurasov, J. M. Hartmann, O. A. Kuznetsov, D. N. Lobanov, Z. F. Krasil'nik, “Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 3,Pages <nobr>404

This article is cited in 3 papers

Manufacturing, processing, testing of materials and structures

Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

M. V. Shaleev^a, A. V. Novikov^a, D. V. Yurasov^a, J. M. Hartmann^b, O. A. Kuznetsov^c, D. N. Lobanov^a, Z. F. Krasil'nik^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b CEA / Leti, 38054 Grenoble, France
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The critical thickness of the two-dimensional growth of Ge on relaxed SiGe/Si(001) buffer layers different in Ge content is studied in relation to the parameters of the layers. It is shown that the critical thickness of the two-dimensional growth of Ge on SiGe buffer layers depends on the lattice mismatch between the film and the substrate and, in addition, is heavily influenced by Ge segregation during SiGe-layer growth and by variations in the growth-surface roughness upon the deposition of strained (stretched) Si layers. It is found that the critical thickness of the two-dimensional growth of Ge directly onto SiGe buffer layers with a Ge content of $x$ = 11–36% is smaller than that in the case of deposition onto a Si (001) substrate. The experimentally detected increase in the critical thickness of the two-dimensional growth of Ge with increasing thickness of the strained (stretched) Si layer predeposited onto the buffer layer is attributed to a decrease in the growth-surface roughness and in the amount of Ge located on the surface as a result of segregation.

Received: 09.04.2012
Accepted: 16.04.2012