This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Dependence of the efficiency of Raman scattering in silicon nanowire arrays on the excitation wavelength

K. V. Bunkov^a, L. A. Golovan^ab, K. A. Gonchar^a, V. Yu. Timoshenko^a, P. K. Kashkarov^ab, M. Kulmas^c, V. Sivakov<sup>c

a</sup> Lomonosov Moscow State University, Faculty of Physics
^b National Research Centre "Kurchatov Institute", Moscow
^c Institut für Photonische Technologien, 07745 Jena, Germany

Abstract: The features of Raman scattering in layers of silicon nanowires from 50 to 350 nm in diameter, obtained by the chemical etching of crystalline silicon ($c$-Si) wafers with preliminarily deposited silver nanoparticles in fluoric acid solutions are studied. $c$-Si wafers with various crystallographic orientations and doping levels are used, which is conditioned by the different sizes and degrees of ordering of the formed nanostructures. It is found that the radiation of the Raman scattering of samples is depolarized, and its efficiency depends strongly on the excitation wavelength. Upon excitation by light with a wavelength of 1064 nm, the ratio of Raman-scattering intensities of silicon nanowire samples and $c$-Si is 2 to 5; as the wavelength decreases, this ratio increases for structures with larger silicon-nanowire diameters and higher degrees of ordering and decreases for less ordered structures. The results obtained are explained by the effect of partial light localization in silicon nanowire arrays.

Received: 19.04.2012
Accepted: 10.05.2012

 English version: Semiconductors, 2013, 47:3, 354–357

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