This article is cited in 4 papers

Surface, interfaces, thin films

Study of the recombination process at crystallite boundaries in CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) films by microwave photoconductivity

K. V. Bocharov^a, G. F. Novikov^a, T. Y. Hsieh^b, M. V. Gapanovich^a, M. J. Jeng<sup>b

a</sup> Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, Chernogolovka, Moscow region
^b Department of Electronic Engineering and Green Technology Research Center, Chang-Gung University, 295 WenHwa 1st Road, Kweishan-Taoyuan 333, Taiwan, Republic of China

Abstract: The loss kinetics of photogenerated charge carriers in thin polycrystalline chalcopyrite CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) films has been studied by microwave photoconductivity (at 36 GHz). The films were synthesized using the ampoule method and three variants of physical vapor deposition with subsequent selenization: magnetron sputtering, thermal deposition, and modified thermal deposition with intermetallic precursors. The photoconductivity was excited by 8-ns nitrogen laser pulses with maximum intensity of 4 $\times$ 10$^{14}$ photons/cm per pulse. Measurements were performed in the temperature range 148–293 K. The photoresponse amplitude is found to depend linearly on the sizes of coherent-scattering regions in the film grains, which were calculated from X-ray diffraction data. The photoresponse decay obeys hyperbolic law. The photoresponse half-decay time increases with a decrease in both temperature and light intensity. It is shown that the recombination of free holes with trapped electrons is very efficient near the crystallite boundaries.

 English version: Semiconductors, 2013, 47:3, 335–340

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