T. T. Мnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour, “Violation of neutrality and occurrence of <nobr>$S$</nobr>-shaped current-voltage characteristic for doped semiconductors under double injection”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 3,Pages <nobr>302

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Electronic properties of semiconductors

Violation of neutrality and occurrence of $S$-shaped current-voltage characteristic for doped semiconductors under double injection

T. T. Мnatsakanov^a, A. G. Tandoev^a, M. E. Levinshteĭn^b, S. N. Yurkov^a, J. W. Palmour^c

^a Russian Electrotechnical Institute Named after V. I. Lenin
^b Ioffe Institute, St. Petersburg
^c CREE Inc., 4600 Silicon Dr., Durham NC 27703, USA

Abstract: It is shown that violation of quasi-neutrality and its subsequent recovery (with an increase in the current density) may occur in doped $n$ layers of $p^+$–$n$–$n^+$ structures under double injection at a high injection level and for a certain combination of electrical parameters. The violation of quasi-neutrality leads to a significant increase in the voltage across the base and subsequent recovery of neutrality gives rise to sharp decrease in voltage drop, as a result of which an $S$-shaped current-voltage characteristic is formed. The characteristic threshold current density for this effect is proportional to the base doping level $N_d$.

Received: 24.04.2012
Accepted: 06.06.2012