This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

P. A. Aleksandrov, K. D. Demakov, S. G. Shemardov, Yu. Yu. Kuznetsov

National Research Centre "Kurchatov Institute", Moscow

Abstract: Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90–150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.

Received: 06.08.2012
Accepted: 13.08.2012

 English version: Semiconductors, 2013, 47:2, 298–300

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