IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

The electrically active centers in oxygen-implanted silicon

A. S. Loshachenko^a, O. F. Vyvenko^a, E. I. Shek^b, N. A. Sobolev<sup>b

a</sup> V. A. Fock Institute of Physics, Saint-Petersburg State University
^b Ioffe Institute, St. Petersburg

Abstract: Electrically active centers have been firstly studied by the capacitance transient spectroscopy technique in $p$-Cz-Si implanted with oxygen ions and annealed in a chlorine-containing atmosphere. The temperature dependences of the thermal emission rates of holes from the levels to the valence band were measured and the influence of the annealing conditions on the level concentrations were studied. The deep and shallow levels revealed in the samples with dislocation related luminescence are characterized by similar level parameters to those observed in samples containing extended defects and performed by different techniques (deformation, formation of oxygen precipitates and direct bonding of wafers). Some distinctions in the parameters are associated with the changes of the extended defect strain fields due to specific conditions of their preparing.

Received: 17.07.2012
Accepted: 20.07.2012

 English version: Semiconductors, 2013, 47:2, 285–288

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