This article is cited in 3 papers

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Electron levels and luminescence of dislocation networks formed by the hydrophilic bonding of silicon wafers

A. S. Bondarenko, O. F. Vyvenko, I. A. Isakov

V. A. Fock Institute of Physics, Saint-Petersburg State University

Abstract: Local energy levels produced by dislocations at the interface between bonded $n$- and $p$-Si wafers are studied by deep level transient spectroscopy and by a new technique for the detection of impurity luminescence, induced by the occupation of electron states upon the application of electric pulses (the pulsed trap-refilling-enhanced luminescence technique). It is established that only the shallow levels of the dislocation network, with activation energies of about 0.1 eV, are responsible for the $D1$ dislocation-related luminescence band in both $n$- and $p$-type samples. The occupation of deep levels has no effect on the $D1$-band intensity. A model of coupled neutral trapping centers for charge carriers is proposed. In this model, the difference between the energy position of the $D1$ band (0.8 eV) and the corresponding interlevel energy spacing (0.97 eV) is attributed to the Coulomb interaction between charge carriers trapped at the levels.

Received: 17.07.2012
Accepted: 20.07.2012

 English version: Semiconductors, 2013, 47:2, 259–263

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