K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin, N. V. Abrosimov, H. Riemann, S. G. Pavlov, H.-W. Hübers, “Shallow-donor lasers in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 2,Pages <nobr>199

This article is cited in 6 papers

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Shallow-donor lasers in uniaxially stressed silicon

K. A. Kovalevsky^a, R. Kh. Zhukavin^a, V. V. Tsyplenkov^a, V. N. Shastin^a, N. V. Abrosimov^b, H. Riemann^b, S. G. Pavlov^c, H.-W. Hübers^c

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Leibniz Institute for Crystal Growth, Berlin, 12489, Germany
^c Institute of Planetary Research, DLR, Berlin, 12489, Germany

Abstract: The effects of the terahertz-stimulated emission of Group-V donors (phosphorus, antimony, arsenic, bismuth) in uniaxially stressed silicon, excited by CO$_2$ laser radiation are experimentally studied. It is shown that uniaxial compressive stress of the crystal along the [100] direction increases the gain and efficiency of stimulated radiation, significantly decreasing the threshold pump intensity. The donor frequencies are measured and active transitions are identified in stressed silicon. The dependence of the residual population of active donor states on the uniaxial compressive stress along the [100] direction is theoretically estimated.

Received: 17.07.2012
Accepted: 17.07.2012