This article is cited in 13 papers

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Annealing kinetics of boron-containing centers in electron-irradiated silicon

O. V. Feklisova^a, N. A. Yarykin^a, J. Weber<sup>b

a</sup> Institute of Microelectronics Technology and High-Purity Materials RAS
^b Technische Universität Dresden, 01062 Dresden, Germany

Abstract: The annealing kinetics of B$_i$O$_i$ pairs created by fast-electron irradiation in Si wafers is studied. The wafers are grown by the Czochralski method and doped with boron to different levels. It is found that, at a particular temperature, the annealing rate steadily increases with increasing boron concentration. The results are described with a simple model that takes into consideration the interaction of interstitial boron atoms with oxygen atoms and substitutional boron atoms. In the context of the model, the temperature dependence of the dissociation rate of the B$_i$O$_i$ complex is calculated.

Received: 17.07.2012
Accepted: 20.07.2012

 English version: Semiconductors, 2013, 47:2, 228–231

Bibliographic databases:

•