This article is cited in 9 papers

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Radiation effects in Si–Ge quantum size structures (review)

N. A. Sobolev

Departamento de Fisica & I3N, Universidade de Aveiro, 3810-193, Aveiro, Portugal

Abstract: The article is dedicated to the review and analysis of the effects and processes occurring in Si–Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Received: 17.07.2012
Accepted: 20.07.2012

Language: English

 English version: Semiconductors, 2013, 47:2, 217–227

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