RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2013 Volume 47, Issue 2, Pages 147–167 (Mi phts7818)

This article is cited in 41 papers

IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012

Light emission from silicon nanocrystals

O. B. Gusev, A. N. Poddubnyi, A. A. Prokof'ev, I. N. Yassievich

Ioffe Institute, St. Petersburg

Abstract: The main experimental results of studies of the photoluminescence of silicon nanocrystals and theoretical methods developed for the description of optical processes occurring in them are reviewed. Special attention is focused on silicon nanocrystals in the SiO$_2$ matrix that were the object of most of the studies. Two fundamental theoretical methods described in detail are the multiband effective-mass method and the tight-binding method which have found wide application in simulating various processes occurring in nanostructures. A phenomenological model for excitons self-trapped on the surface of oxidized silicon nanocrystals, which has been recently developed on the basis of experimental results obtained by femtosecond spectroscopy, is reported.

Received: 25.06.2012
Accepted: 28.06.2012


 English version:
Semiconductors, 2013, 47:2, 183–202

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026