This article is cited in 3 papers

Semiconductor physics

Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor

V. S. Yuferev^a, M. E. Levinshteĭn^a, J. W. Palmour<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b CREE Inc., 4600 Silicon Dr., Durham NC 27703, USA

Abstract: A numerical model making it possible to analyze the specific features of the steady-state distribution of carriers and the nature of the holding current for the axially symmetric case typical of optically triggered high-power SiC thyristors has been developed. The planar and axially symmetric models are compared. The relative contributions of the field and diffusion mechanisms of turn-on spread are analyzed. It is demonstrated that the diffusion mechanism of turn-on spread does not noticeably contribute to the steady-state carrier distribution and the field mechanism plays a major role. The data obtained are in satisfactory agreement with the first experimental results for the holding current in optically triggered SiC thyristors.

Received: 19.04.2012
Accepted: 20.04.2012

 English version: Semiconductors, 2013, 47:1, 116–121

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