This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Photoelectric diagnostics method for InGaN/GaN multiple-quantum-well heterostructures

M. V. Baranovskiy, G. F. Glinskii, M. S. Mironova

Saint Petersburg Electrotechnical University "LETI"

Abstract: Dependences of the photocurrent of InGaN/GaN multiple-quantum-well heterostructures on reverse bias are studied. Features associated with the sequential passage of the boundary of the space-charge region through the quantum wells of the structure under study are found. It is shown experimentally that a reverse-bias region with negative photoconductivity exists for each quantum well. This region vanishes as the energy of optical-excitation photons increases. It is assumed that this effect is caused by a shift of the optical absorption edge in the quantum well, which occurs with partial compensation of the piezoelectric field by the electric field of the $p$–$n$ junction in the quantum-well region.

Received: 15.05.2012
Accepted: 21.05.2012

 English version: Semiconductors, 2013, 47:1, 58–62

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