This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Luminescence in ZnMnTe/ZnMgTe and CdMnTe/CdMgTe structures with different parameters of quantum wells

V. F. Agekyan^a, A. Yu. Serov^a, N. G. Filosofov^a, G. Karczewski<sup>b

a</sup> V. A. Fock Institute of Physics, Saint-Petersburg State University
^b Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland

Abstract: The low-temperature luminescence of ZnMnTe/ZnMgTe and CdMnTe/CdMgTe quantum well structures with different quantum well widths and different Mn proportions is studied at optical-excitation power densities ranging from 10$^4$ to 10$^6$ W cm$^{-2}$. Because of saturation of the lowest excited state $^4T_1$ of the 3$d$ shell of Mn$^{2+}$ ions, transitions to higher states start to play an important role. As a result, the intracenter luminescence of Mn$^{2+}$ ions deteriorates at high excitation levels. Simultaneously, the temperature-dependent saturation of the main exciton-emission band $e1hh1$ of the quantum wells occurs, and the band $e2hh2$ emerges. As the optical excitation is increased, the intracenter luminescence band of Mn$^{2+}$ ions changes its shape. This effect is attributed to the faster saturation of the excited states of interface ions. For CdMnTe/CdMgTe structures, the effect of the quantum well width and Mn content on the relation between the emission intensities corresponding to excitons in quantum wells, excitons in barriers, and the 3$d$ shell of Mn$^{2+}$ ions is established.

Received: 19.04.2012
Accepted: 25.04.2012

 English version: Semiconductors, 2013, 47:1, 45–49

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