Fizika i Tekhnika Poluprovodnikov, 2025 Volume 59, Issue 3,Pages 165–170(Mi phts7791)
Micro- and nanocrystalline, porous, composite semiconductors
Identification of conditions for the formation of deep states of mismatch dislocations and DX centers in heteroepitaxial lightly doped Al$_x$Ga$_{1-x}$As$_{1-y}$Sb$_y$/GaAs layers
Abstract:
High-voltage gradual $p^0$–$i$–$n^0$ junctions of Al$_x$Ga$_{1-x}$As and Al$_x$Ga$_{1-x}$As$_{1-y}$Sb$_y$ with a maximum content of $x$ from 0.15 to 0.6 and $y$ to 0.02, obtained by liquid-phase epitaxy due to autodoping with background impurities, have been studied using methods of capacitance-voltage characteristics and deep-level transient spectroscopy. It was found that the effective recombination trap in the heteroepitaxial layers of Al$_x$Ga$_{1-x}$As/GaAs and Al$_x$Ga$_{1-x}$As$_{1-y}$Sb$_y$/GaAs with $x$ more than 0.23, regardless of the antimony content, is the DX center of background donor impurities Si, Se, or Te, while these heterostructures lacked deep levels associated with dislocations. In the Al$_x$Ga$_{1-x}$As$_{1-y}$Sb$_y$/GaAs heterostructures with $x\sim$ 0.15–0.19 and $y\sim$ 0.02 and GaAs$_{1-y}$Sb$_y$/GaAs with $y\sim$ 0.02, the deep HD3 level associated with mismatch dislocations is an effective recombination trap.
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