Non-electronic properties of semiconductors (atomic structure, diffusion)

Influence of radiative heat transfer on growth temperature during epitaxy of HgCdTe layers

V. A. Shvets^a, D. V. Marin^bc, I. A. Azarov^a, M. V. Yakushev<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c The Specialized Educational Scientific Center of Novosibirsk State University

Abstract: There are two mechanisms of substrate heating during molecular beam epitaxy: thermal conductivity and thermal radiation. The paper considers the contribution of radiative heating to establishing the sample temperature during epitaxy of the CdHgTe layer. At the initial stage of growth, the emissivity of the structure changes and the thermal balance is disturbed. Numerical calculations have shown that in the absence of thermal contact between the sample and the heater, this should lead to a significant increase in the equilibrium temperature of the structure. The dynamics of temperature change during continuous growth of the CdHgTe layer is calculated. It follows from these calculations that a residual change in temperature will also be observed after the growth has ceased. Experiments performed with use of spectral ellipsometer did not reveal the expected temperature changes. From this it was concluded that in installations of the “Ob” type, when the sample is in mechanical contact with a heated graphite washer, the radiative heating mechanism is not dominant.

Received: 29.04.2025
Revised: 04.07.2025
Accepted: 04.07.2025

DOI: 10.61011/FTP.2025.03.61094.7916