Abstract:
Ion-doped layers with a thickness up to 2.6 $\mu$m were formed using the method of synergy of high-intensity implantation and simultaneous energy impact of a titanium ion beam with a current density of 1.6 A/cm$^2$ on the silicon surface. The article presents the results of the regularities of titanium accumulation in silicon from the duration and frequency of pulses, when a power density of the ion beam is fixed – 9.6 $\cdot$ 10$^4$ W/cm$^2$. The Auger electron spectroscopy method was used to obtain dopant distributions over the modified layer depth. X-ray phase analysis demonstrated the presence of titanium disilicide TiSi$_2$ and titanium silicide TiSi phases.
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