This article is cited in 7 papers

Semiconductor physics

$p$-ZnO nanowires–A promising material for the fabrication of vacuum pressure sensors

V. B. Kapustyanyk, M. R. Panasyuk, B. I. Turko, Yu. G. Dubov, R. Ya. Serkiz

Scientific-Technical and Educational Center of Low-Temperature Studies, Ivan Franko National University of Lviv, Lviv, 79005, Ukraine

Abstract: The fabrication of a vacuum pressure sensor on the basis of $p$-ZnO nanowires is described. The nanowires are grown by electrodeposition from an aqueous solution in an electrochemical cell with two electrodes. It is assumed that the hole conductivity in the nanowires is caused by the zinc vacancy $V_{\mathrm{Zn}}$. The operation basis of the fabricated vacuum pressure sensor is the oxygen chemisorption-desorption process on the surface of ZnO nanostructures. It is shown that the current flowing through the $p$-ZnO nanostructures in the fabricated vacuum pressure sensor linearly increases with pressure in semilogarithmic coordinates.

Received: 16.01.2014
Accepted: 26.03.2014

 English version: Semiconductors, 2014, 48:10, 1395–1398

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