This article is cited in 6 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates

V. P. Popov^a, M. A. Ilnitskii^a, O. Naumova^a, A. N. Nazarov<sup>b

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Institute of Semiconductor Physics NAS, Kiev

Abstract: The linear charge coupling effect of threshold voltages $V_{\mathrm{th}}$ of the bottom (field) gate, i.e., a substrate of the silicon-on-insulator structure of fully depleted $n$-MIC transistors on a lightly doped silicon layer 20–50 nm thick, is studied depending on the voltage $V_{\mathrm{bg}}$ of the top asymmetrically biased (with negative polarity) $N^+$-poly-Si gate. It is shown that the quantum-mechanical correction conditioned by the electrostatically induced size effect of the transverse field should be considered when determining the linear charge coupling region between gates even at a silicon layer thickness of $\sim$ 50 nm. An increase in the positive charge on the surface states at the heterointerface with a silicon layer increases the quantum-mechanical correction by a factor of 2–4 due to the quantum capacitance effect affecting donor-trap recharging in the case of a significant difference between the opposite-polarity potentials of the two gates.

Received: 22.01.2014
Accepted: 03.02.2014

 English version: Semiconductors, 2014, 48:10, 1312–1317

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