This article is cited in 1 paper

Surface, interfaces, thin films

Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose

I. E. Tyschenko^a, V. A. Volodin^ab, V. V. Kozlovsky^c, V. P. Popov<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Peter the Great St. Petersburg Polytechnic University

Abstract: The properties of silicon-on-insulator films implanted with high hydrogen-ion doses ($\sim$ 50 at%) and annealed under a pressure of 10.5 kbar are studied using the Raman scattering (RS) method. A high degree of optical-phonon localization is detected in the films under study, which is retained to an annealing temperature of $\sim$ 1000$^\circ$C and is explained by the formation of silicon nanocrystals. It is found that the activation energy of annealing of the structural relaxation of dangling bonds in films with a high hydrogen content is independent of the annealing pressure. The activation energy of growth of the crystalline phase, calculated from RS spectra is $\sim$ 1.5 eV and is independent of pressure. The effect of hydrostatic pressure consists only in a decrease in the frequency factor limiting Si–Si bond relaxation during ordering.

Received: 20.03.2014
Accepted: 28.04.2014

 English version: Semiconductors, 2014, 48:10, 1303–1307

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