This article is cited in 9 papers

Electronic properties of semiconductors

Comparison of the radiation hardness of silicon and silicon carbide

A. A. Lebedev, V. V. Kozlovsky

Peter the Great St. Petersburg Polytechnic University

Abstract: The radiation hardness of silicon carbide and silicon are compared. It is shown that one of the main characteristics of the radiation hardness of a semiconductor, the carrier removal rate $V_d$, strongly depends on its measurement conditions in the case of wide-gap semiconductors. A conclusion is made that comparison of the values of $V_d$, obtained at room temperature for SiC and Si, is not fully adequate from the physical standpoint.

Received: 18.03.2014
Accepted: 26.03.2014

 English version: Semiconductors, 2014, 48:10, 1293–1295

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