Abstract:
The special postgrowth processing of structures for quantum-cascade lasers is studied. The processing includes regrowth with a high-resistivity material (indium phosphide) with a carrier concentration of $n\approx$ 5 $\cdot$ 10$^{10}$ cm$^{-3}$, photolithography with various wet chemical etchants, and the fabrication of special contacts providing enhanced heat removal. The use of modified postgrowth processing provides necessary parameters satisfying requirements for high-quality devices.