This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical properties of thin-film semiconductor heterojunctions $n$-TiO$_2$/$p$-CuInS$_2$

V. V. Brus, I. G. Orletskii, M. I. Ilashschuk, P. D. Mar'yanchuk

Chernivtsi National University named after Yuriy Fedkovych

Abstract: Anisotype thin-film heterojunctions $n$-TiO$_2$/$p$-CuInS$_2$ are fabricated by spray-pyrolysis and dc reactive magnetron sputtering. The electrical and optical properties of thin CuInS$_2$ films deposited by spraypyrolysis in strictly controlled modes are examined. Also, the electrical properties of the Mo/CuInS$_2$ rear contact are studied by means of measurements by the three-probe method. The dominant charge transport mechanism in forward- and reverse-biased thin-film heterojunctions $n$-TiO$_2$/$p$-CuInS$_2$ is determined. This mechanism is well interpreted in terms of the tunneling-recombination model via surface states at the heterointerface and defects in the space-charge region.

Received: 10.10.2013
Accepted: 21.10.2013

 English version: Semiconductors, 2014, 48:8, 1046–1050

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