This article is cited in 4 papers

Electronic properties of semiconductors

On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon

V. V. Tsyplenkov, R. Kh. Zhukavin, V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The low-temperature phonon-assisted relaxation rates of the excited states of bismuth donors in a silicon crystal uniaxially stressed in the [100] crystallographic direction are calculated. The states belonging to the lower (2$\Delta$) and upper (4$\Delta$) valleys of the silicon conduction band are considered. It is shown that the population inversion of bismuth donor states in the upper (4$\Delta$) valleys of the silicon conduction band under optical pumping is possible.

Received: 12.08.2013
Accepted: 22.01.2014

 English version: Semiconductors, 2014, 48:8, 1017–1022

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