This article is cited in 12 papers

Electronic properties of semiconductors

Conductivity compensation in $n$-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

V. V. Kozlovsky^a, A. A. Lebedev^b, V. N. Lomasov^a, E. V. Bogdanova^b, N. V. Seredova<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg

Abstract: The effect of electron irradiation on $n$-4H-SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be $V_d\approx$ 0.25 cm$^{-1}$. Total conductivity compensation in samples with an initial carrier concentration of (1–2) $\times$ 10$^{15}$ cm$^{-2}$ is observed at irradiation doses of $\sim$ 5 $\cdot$ 10$^{15}$ cm$^{-2}$. Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4H-SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed.

Received: 19.12.2013
Accepted: 25.12.2013

 English version: Semiconductors, 2014, 48:8, 1006–1009

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