This article is cited in 1 paper

Electronic properties of semiconductors

Effect of interband scattering on transport phenomena in $p$-PbSb$_2$Te$_4$

S. A. Nemov^ab, N. M. Blagikh^a, M. B. Dzhafarov<sup>c

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Zabaikalsky State University, Chita
^c Azerbaijan Technological University

Abstract: Experimental data on transport phenomena in $p$-PbSb$_2$Te$_4$ are qualitatively and quantitatively interpreted within the context of the two-band model with interband scattering in the temperature range 77–300 K. The parameters of the two-band model are determined. Specifically, it is found that the density-of-state effective masses of light and heavy holes are, correspondingly, $m_{d1}\approx$ 0.5 $m_0$ and $m_{d2}\approx$ 0.9 $m_0$ ($m_0$ is the free electron mass) and the energy gap between nonequivalent extrema are $\Delta E_v(T)\approx$ 0.23 – 4.5 $\times$ 10$^{-2}$($T$/100 – 1) eV.

Received: 18.12.2013
Accepted: 23.12.2013

 English version: Semiconductors, 2014, 48:8, 999–1005

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