This article is cited in 1 paper

Electronic properties of semiconductors

Deformation paramagnetic defects in Fz-$^{29}$Si:P crystals

O. V. Koplak^a, A. I. Dmitriev^a, S. G. Vasil'ev^a, E. A. Steinman^b, S. I. Alekseev^c, R. B. Morgunov<sup>a

a</sup> Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
^b Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia
^c Eurasian Open Institute, Moscow, 109052, Russia

Abstract: A new type of paramagnetic defects generated under plastic deformation (at 1223 K) in isotopically enriched floating-zone-grown silicon crystals Fz-Si:P (76% $^{29}$Si) are found. The anisotropic spectra of the electron-spin resonance of these defects testify that they are of doping origin and have the spin $S$ = 1. The spectra of nuclear magnetic resonance are Pake doublets split by the spin-spin nuclear interaction and broadened by electron-nuclear dipole-dipole relaxation.

Keywords: $^{29}$

Received: 14.11.2013
Accepted: 03.12.2013

 English version: Semiconductors, 2014, 48:8, 989–995

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