This article is cited in 9 papers

Electronic properties of semiconductors

Specific features of magnetoresistance in overcompensated manganese-doped silicon

M. K. Bakhadyrkhanov, G. Kh. Mavlonov, H. M. Iliev, K. S. Ayupov, O. E. Sattarov, S. A. Tachilin

Tashkent State Technical University

Abstract: It is shown experimentally that a rather high negative magnetoresistance in silicon is observed not only in compensated $p$-Si$\langle$B, Mn$\rangle$, but also in overcompensated $n$-Si$\langle$B, Mn$\rangle$ with a Fermi level of $F=E_C$ – 0.35eV $\div$ $E_C$ – 0.55 eV. The magnitude and the temperature range of the negative magnetoresistance in materials of this kind are determined by the position of the Fermi level.

Received: 11.11.2013
Accepted: 03.12.2013

 English version: Semiconductors, 2014, 48:8, 986–988

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