This article is cited in 6 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in $n$-InAs matrix

V. V. Romanov, È. V. Ivanov, K. D. Moiseev

Ioffe Institute, St. Petersburg

Abstract: Room-temperature electroluminescence is observed for the first time in type-II heterostructures based on InSb quantum dashes embedded in a narrow-gap n-InAs matrix. The heterostructures exhibit positive luminescence at wavelengths in the range 3–4 $\mu$m. This is due to the interfacial radiative transitions of electrons from self-consistent quantum wells on the side of InAs matrix layers across the broken-gap type-II InSb/InAs heterointerface to quantum-well hole levels in the InSb quantum dashes, situated in the energy gap of the matrix near the InAs conduction-band bottom.

Received: 23.10.2013
Accepted: 11.11.2013

 English version: Semiconductors, 2014, 48:7, 911–916

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