XXIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2025

Photoluminescence of Ge/Si heterostructures with quantum dots created by epitaxy from ion-molecular beams

Zh. V. Smagina^a, V. A. Zinovyev^a, A. V. Mudryi^b, O. M. Borodavchenko^b, A. O. Bazhenov^ac, A. V. Dvurechenskii^a, V. D. Zhivulko<sup>b

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Scientific-Practical Materials Research Centre of NAS of Belarus
^c Novosibirsk State University

Abstract: The comparative analysis of the structural and lu- minescent characteristics of nanostructures with quantum dots created during Geepitaxy on Si(100) under conditions of irradi- ation with and without Ge$^+$ ions with an energy of $\sim$ 2 keV has been carried out. It was found that irradiation with Ge$^+$ ions used in the heteroepitaxy process increases the photoluminescence intensity by 3 times compared with samples created without ion irradiation. In the irradiated samples, a shift of the maximum of the photoluminescence band of Ge Si quantum dots by $\sim$ 25 meV to a lower-energy region was detected. Based on the analysis of the temperature dependences of photoluminescence spectra in the range of 5–300 K, the activation energies of the thermal quenching of the band associated with quantum dots are determined.

Received: 26.03.2025
Revised: 23.06.2025
Accepted: 23.06.2025

DOI: 10.61011/FTP.2025.02.60977.7726