Abstract:
Using the technique of the subthreshold currents of metal–oxide–semiconductor (MOS) transistors in the temperature range of 290–450 K, the effect of the temperature conditions of X-ray irradiation on the kinetics of the parameters $U_{\mathrm{th}}$ and $D_{\mathrm{it}}$ of silicon MOS transistors with a channel length of 2–10 $\mu$m is studied. It was shown that, according to the parameters under study, the radiation sensitivity of transistors decreases at irradiation temperatures above 360 K (the temperature of the low-temperature maximum in the spectrum of a thermostimulated depolarization (TSD) transistor) and reaches a maximum near 430 K (corresponding to the high-temperature maximum). The results obtained are interpreted from the standpoint of a model of the existence of two carrier trap types, the redistribution of electrically active Na$^+$, K$^+$, Li$^+$, and H$^+$ ions between them under irradiation, and the effect of the partial neutralization of charges at the interface.
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