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Fizika i Tekhnika Poluprovodnikov, 2014 Volume 48, Issue 5, Pages 667–670 (Mi phts7593)

This article is cited in 1 paper

Micro- and nanocrystalline, porous, composite semiconductors

Semiconductor behavior of nanocrystalline carbon

S. K. Brantov

Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: The study of the characteristics of nanocrystalline carbon films produced by deposition onto single-crystal silicon substrates from the vapor phase during the pyrolysis of methane in an electric field shows that there exists a reversible semimetal-semiconductor transition at temperatures higher than 560$^\circ$C. The material contains a large number of tetrahedral nanoclusters in a pyrolytic carbon matrix. The mass density of the material is higher than 2.7 g cm$^{-3}$. The manyfold increase in the conductivity of the composite upon heating is caused mainly by the transition of the clusters to the region of intrinsic conduction. Estimation of the thermal activation energy of the conductivity of the composite gives 0.78 eV.

Received: 12.08.2013
Accepted: 23.09.2013


 English version:
Semiconductors, 2014, 48:5, 649–652

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