This article is cited in 13 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Heat capacity of hexagonal boron nitride sheet in Holstein model

Hamze Mousavi<sup>ab

a</sup> Department of Physics, Razi University, Kermanshah, Iran
^b Nano Science and Nano Technology Research Center, Razi University, Kermanshah, Iran

Abstract: The effects of electron-phonon interaction on the electronic heat capacity of hexagonal boron nitride plane are investigated within the Holstein Hamiltonian model and Green's function formalism. By using different electron-phonon coupling constants of boron and nitrogen sublattices, it is found that the specific heat has different behaviors in two temperature regions. In the low temperature region, the electron-phonon interaction causes the enhancement of specific heat due to decreasing the band gap, while heat capacity reduces in the high temperature region because of decreasing the excitation spectrum.

Received: 22.11.2012
Accepted: 26.08.2013

Language: English

 English version: Semiconductors, 2014, 48:5, 617–620

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