This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength

N. V. Tkach, J. A. Seti

Chernivtsi National University named after Yuriy Fedkovych

Abstract: A theory of the transmission channels and current-voltage characteristics of a double-barrier resonant tunneling structure driven by dc electric and high-frequency electromagnetic fields of arbitrary strength is proposed based on an obtained exact solution to the complete one-dimensional Schrödinger equation. It is shown for the first time that an increase in the electromagnetic-field strength leads (as a result of the formation of nonresonant transmission channels in the nanostructure) to a change in its current-voltage characteristic from a single-humped to double-humped curve not only in the vicinities of the electron-resonance energies but also in the energy ranges corresponding to the superpositions of pairs of field satellite states.

Received: 26.11.2012
Accepted: 03.12.2013

 English version: Semiconductors, 2014, 48:5, 590–595

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