This article is cited in 6 papers

Electronic properties of semiconductors

Influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films

H. Ph. Nguyen^a, S. A. Kozyukhin^a, A. B. Pevtsov<sup>b

a</sup> Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
^b Ioffe Institute, St. Petersburg

Abstract: Chalcogenide alloys in the Ge–Sb–Te system are promising for application in phase-change memory devices. We investigated the influence of bismuth on the optical properties of Ge$_2$Sb$_2$Te$_5$ thin films and established that the bismuth doping in them allows the optical contrast of the thin films to be increased by about 30% at a wavelength of 400 nm. The experimental results are explained in an assumption on the impurity substitution of bismuth for antimony.

Received: 15.10.2013
Accepted: 18.10.2013

 English version: Semiconductors, 2014, 48:5, 577–583

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