This article is cited in 13 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Isotype surface-barrier $n$-TiN/$n$-Si heterostructure

M. N. Solovan, V. V. Brus, P. D. Mar'yanchuk

Chernivtsi National University named after Yuriy Fedkovych

Abstract: $n$-TiN/$n$-Si heterostructures are prepared by reactive magnetron sputtering. The current-voltage characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and the series resistance of the heterojunction are analyzed. The energy-band diagram for the heterojunctions under study is constructed. The concentration of heterojunction surface states is estimated to be 2.67 $\cdot$ 10$^{13}$ cm$^{-2}$. It is established that the dominant mechanisms of current transport through forward- and reverse-biased $n$-TiN/$n$-Si heterojunctions are described well within the tunnel and emission models.

Received: 14.03.2013
Accepted: 26.03.2013

 English version: Semiconductors, 2014, 48:2, 219–223

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