This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields

È. P. Sinyavskii^a, S. A. Karapetyan<sup>b

a</sup> Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
^b Taras Shevchenko Transnistria State University, Tiraspol

Abstract: The effect of an electric field $\mathbf{E}$ orthogonal to the quantum-wire axis and a magnetic field $\mathbf{H}(\mathbf{H}\perp\mathbf{E}, \mathbf{H}\parallel\mathbf{E})$ on conductivity is studied within the context of the parabolic potential model. It is shown that, if the interaction of charge carriers with the rough surface of the nanostructure is taken into account, the charge-carrier mobility $\mu$ as a function of increasing $E$ is described by an unsteady oscillating curve. A physical interpretation of such behavior of $\mu$ with $E$ is proposed. The specific features of mobility in a transverse magnetic field are discussed.

Received: 17.04.2013
Accepted: 21.05.2013

 English version: Semiconductors, 2014, 48:2, 216–218

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