This article is cited in 1 paper

Surface, interfaces, thin films

Dielectric properties of MnGa$_2$S$_4$ single crystals in an alternating electric field

N. N. Niftiyev^a, O. B. Tagiyev^b, M. B. Muradov^c, F. M. Mammadov<sup>a

a</sup> N. Tusi Azerbaijan State Pedagogical University
^b Institute of Physics Azerbaijan Academy of Sciences
^c Baku State University

Abstract: The results of studies of the frequency and temperature dependences of dielectric conductance and the tangent of the angle of dielectric losses for MnGa$_2$S$_4$ single crystals in a varying electric field are presented. Their values are determined experimentally. An increase in the dielectric conductivity is related to an increase in the defect concentration as temperature is increased. At the temperatures under study, a resonance peak is observed for $\varepsilon$ and $\operatorname{\tan}\delta$ in the frequency range of 435–500 kHz. It is found that, in the frequency range of 25–2 $\times$ 10$^5$ kHz, the tangent of the angle of dielectric losses decreases in reverse proportion to the frequency $(\sim 1/\omega)$.

Received: 28.02.2013
Accepted: 08.04.2013

 English version: Semiconductors, 2014, 48:2, 204–206

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