This article is cited in 2 papers

Materials of the 3rd Symposium "Semiconductor Lasers: Physics and Technology" (St. Petersburg, October 13-16, 2012)

Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm

V. V. Bezotosnyi, V. A. Oleshchenko, E. A. Cheshev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The output characteristics of high-power laser diodes for a wavelength of 808 nm, which were fabricated on the basis of GaAsP/AlGaAs/GaAs strained heterostructures and discarded due to the results of initial measurement, are measured experimentally. Methods for restoration of their radiative parameters to the level of the best samples are found. Possible causes of the observed phenomena are discussed.

Received: 01.06.2013
Accepted: 16.06.2013

 English version: Semiconductors, 2014, 48:1, 104–108

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