This article is cited in 5 papers

Materials of the 3rd Symposium "Semiconductor Lasers: Physics and Technology" (St. Petersburg, October 13-16, 2012)

Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission

V. P. Konyaev, A. A. Marmalyuk, M. A. Ladugin, T. A. Bagaev, M. V. Zverkov, V. V. Krichevskii, A. A. Padalitsa, S. M. Sapozhnikov, V. A. Simakov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: The results of studying single laser diodes and arrays in the spectral range of 900–1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated heterostructures are presented. It is shown that the use of InGaAs/AlGaAs epitaxially integrated heterostructures allows the development of laser emitters with increased power and brightness, operating in the short pulse mode. The results of studying the characteristics of laser-diode arrays (LDAs) fabricated using these heterostructures are presented.

Received: 01.06.2013
Accepted: 16.06.2013

 English version: Semiconductors, 2014, 48:1, 99–103

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