Materials of the 3rd Symposium "Semiconductor Lasers: Physics and Technology" (St. Petersburg, October 13-16, 2012)

High-power pulse-emitting lasers in the 1.5–1.6 $\mu$m spectral region

P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: The metalorganic chemical vapor deposition (MOCVD) method is used for growing heterostructures in the system of AlGaInAs/InP materials with different versions of the configuration of the active region. Laser diodes are fabricated from the grown heterostructures; with the purpose of increasing the output optical power, the laser diodes are integrated into bars and arrays. Single laser diodes exhibit a high output power of $\sim$ 6 W in the pulse mode. The laser bars exhibit an output power of 20 W in the pulse mode. The highest achieved pulse output optical power for an array of 30 elements amounts to $\sim$ 110 W.

Received: 01.06.2013
Accepted: 16.06.2013

 English version: Semiconductors, 2014, 48:1, 95–98

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