This article is cited in 1 paper

Semiconductor physics

Dynamics of carrier recombination in a semiconductor laser structure

R. I. Dzhioev^a, K. V. Kavokin^ab, Yu. G. Kusrayev^a, N. K. Poletaev<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg State University

Abstract: Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be $\tau_e$ = 5 $\times$ 10$^{-9}$ s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

Received: 29.04.2015
Accepted: 06.05.2015

 English version: Semiconductors, 2015, 49:11, 1531–1535

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