This article is cited in 7 papers

Semiconductor physics

Dynamic characteristics of 4H-SiC drift step recovery diodes

P. A. Ivanov, O. I. Kon'kov, T. P. Samsonova, A. S. Potapov, I. V. Grekhov

Ioffe Institute, St. Petersburg

Abstract: The dynamic characteristics of 4H-SiC $p^+$–$p$–$n_0$–$n^+$ diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the subnanosecond termination of the reverse current maintained by electron-hole plasma preliminarily pumped by a forward current pulse is analyzed in detail. The influence exerted on the DSRD effect by the amplitude of reverse-voltage pulses, the amplitude and duration of forward-current pulses, and the time delay between the forward and reverse pulses is demonstrated and accounted for.

Received: 22.04.2015
Accepted: 06.05.2015

 English version: Semiconductors, 2015, 49:11, 1511–1515

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