This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Temperature quenching of spontaneous emission in tunnel-injection nanostructures

V. G. Talalaev^ab, B. V. Novikov^a, G. È. Cirlin^cd, H. S. Leipner<sup>e

a</sup> V. A. Fock Institute of Physics, Saint-Petersburg State University
^b Max Planck Institute of Microstructure Physics, 06120 Halle, Germany
^c St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^e Martin Luther University Halle-Wittenberg, Interdisciplinary Center of Materials Science, 06120 Halle, Germany

Abstract: The spontaneous-emission spectra in the near-IR range (0.8–1.3 $\mu$m) from inverted tunnel-injection nanostructures are measured. These structures contain an InAs quantum-dot layer and an InGaAs quantum-well layer, separated by GaAs barrier spacer whose thickness varies in the range 3–9 nm. The temperature dependence of this emission in the range 5–295 K is investigated, both for optical excitation (photoluminescence) and for current injection in $p$–$n$ junction (electroluminescence). At room temperature, current pumping proves more effective for inverted tunnel-injection nanostructures with a thin barrier ($<$ 6 nm), when the apexes of the quantum dots connect with the quantum well by narrow InGaAs straps (nanobridges). In that case, the quenching of the electroluminescence by heating from 5 to 295 K is slight. The quenching factor $S_\mathrm{T}$ of the integrated intensity $I$ is $S_\mathrm{T}=I_5/I_{295}\approx3$. The temperature stability of the emission from inverted tunnel-injection nanostructures is discussed on the basis of extended Arrhenius analysis.

Received: 13.04.2015
Accepted: 20.04.2015

 English version: Semiconductors, 2015, 49:12, 1483–1492

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