E. S. Obolenskaya, A. Yu. Churin, S. V. Obolensky, A. V. Murel, V. I. Shashkin, “On the radiation resistance of planar Gunn diodes with <nobr>$\delta$</nobr>-doped layers”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11,Pages <nobr>1507

This article is cited in 4 papers

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

On the radiation resistance of planar Gunn diodes with $\delta$-doped layers

E. S. Obolenskaya^a, A. Yu. Churin^a, S. V. Obolensky^a, A. V. Murel^b, V. I. Shashkin^b

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of $\delta$ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an order of magnitude compared to conventional Gunn diodes. The results of this study make it possible to formulate methodical guidelines to reduce the amount of computational and experimental studies without a considerable decrease in their informativity.

Received: 22.04.2015
Accepted: 12.05.2015