D. A. Kolpakov, B. N. Zvonkov, S. M. Nekorkin, N. V. Dikareva, V. Ya. Aleshkin, A. A. Dubinov, “On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate”, Fizika i Tekhnika Poluprovodnikov, 2015, Volume 49, Issue 11,Pages 1489

This article is cited in 1 paper

XIX Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 10-14, 2015

On a semiconductor laser with a $p$–$n$ tunnel junction with radiation emission through the substrate

D. A. Kolpakov^a, B. N. Zvonkov^a, S. M. Nekorkin^a, N. V. Dikareva^a, V. Ya. Aleshkin^bc, A. A. Dubinov^bc

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Lobachevsky State University of Nizhny Novgorod

Abstract: A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

Received: 22.04.2015
Accepted: 12.05.2015